Telecom Energia Vds 650V RDS99mΩ Diodo de Recuperação Rápida

• Certificação: RoHS, CE, ISO
• Forma: Tubo de metal Porcelain
• Tipo de blindagem: Afiada Cutoff Tubo Blindagem
• N ° de Modelo.: OSG65R099HSZAF
• Método de refrigeração: Air Tubo Refrigerado
• Função: Transistor de alta pressão Voltar
• Freqüência de trabalho: Alta frequência
• Estrutura: planar
• Estrutura encapsulamento: Transistor selado de plástico
• Nível de poder: Alto poder
• material: Silício, Silicon Wafers
• tecnologia de fabricação: dispositivo discreto
• processamento de sinal: função e composto digital analógico
• digite: estação de carregamento rápido de ev
• pacote: o247
• aplicação: alimentação do pc
• modelo: osg65r099hszaf
• número do lote: 2024
• marca: semi-oriental
• descrição: perda de comutação extremamente baixa
• características: excelente estabilidade e uniformidade
• aplicações: alimentação do pc
• indústrias: iluminação led
• certificação: iso, tuv, rohs
• garantia: 24 meses
• Pacote de Transporte: ar
• Marca Registrada: semicondutor orientalsemicondutor
• Origem: China
• Código HS: 854129000
• Capacidade de Produção: 20kkkk/mensal

Descrição de Produto

Product Description

General Description

The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.

Features                                                                                                   

• Low RDS(on) & FOM
• Extremely low switching loss
• Excellent stability and uniformity
• Ultra-fast and robust body diode
• AEC-Q101 Qualified for Automotive Application

Applications

• PC power
• Telecom power
• Server power
• EV Charger
• Motor driver

Key Performance Parameters

 

Parameter	Value	Unit
VDS	650	V
ID, pulse	96	A
RDS(ON), max @ VGS=10V	99	mΩ
Qg	66.6	nC

Marking Information

 

Product Name	Package	Marking
OSG65R099HSZAF	TO247	OSG65R099HSZA

The HTRB test was performed at 600V more strictly than the AEC-Q101 rev.C (80% V(BR)DSS). All the other tests were performed according to AEC Q101 rev. E.

 

Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current^1), TC=25 °C	ID	32	A
Continuous drain current^1), TC=100 °C		20
Pulsed drain current^2), TC=25 °C	ID, pulse	96	A
Continuous diode forward current^1), TC=25 °C	IS	32	A
Diode pulsed current^2), TC=25 °C	IS, pulse	96	A
Power dissipation^3) ,TC=25 °C	PD	278	W
Single pulsed avalanche energy5)	EAS	648	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics
 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.45	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	650			V	VGS=0 V, ID=1 mA
Gate threshold voltage	VGS(th)	3.0		4.5	V	VDS=VGS, ID=1 mA
Drain-source on- state resistance	RDS(ON)		0.090	0.099	Ω	VGS=10 V, ID=16 A
			0.21			VGS=10 V, ID=16 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			10	μA	VDS=650 V, VGS=0 V
Gate resistance	RG		7.8		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		3988		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		210		pF
Reverse transfer capacitance	Crss		7.4		pF
Effective output capacitance, energy related	Co(er)		124		pF	VGS=0 V, VDS=0 V-400 V
Effective output capacitance, time related	Co(tr)		585		pF
Turn-on delay time	td(on)		46.0		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=20 A
Rise time	tr		60.3		ns
Turn-off delay time	td(off)		93.0		ns
Fall time	tf		3.7		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		66.6		nC	VGS=10 V, VDS=400 V, ID=20 A
Gate-source charge	Qgs		20.6		nC
Gate-drain charge	Qgd		24.8		nC
Gate plateau voltage	Vplateau		6.7		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=32 A, VGS=0 V
Reverse recovery time	trr		151.7		ns	IS=20 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		1.0		μC
Peak reverse recovery current	Irrm		12.3		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.