Aluminum Nitride Aln Ceramic Plate for Electronic Application

• Aplicação: Aeroespacial, Eletrônicos, Médico, Refratário, cerâmica industrial
• Tipo: placas de cerâmica
• constante dieléctrica: 8.56
• resistência a choques térmicos: sem fissuras
• absorção de água: 0
• condutividade térmica: 176.3W/M.K
• N ° de Modelo.: AA INCAPLATE
• serviço de processamento: molde
• densidade: 3.3
• resistência à compressão: 2300
• resistividade do volume: 0.515*10^14
• temperatura máxima de utilização: 1600
• força flexural: 538
• coeficiente de expansão térmica linear: 2.9*10^-6/ºC
• Pacote de Transporte: Carton/Wooden Case
• Especificação: Personalizado
• Marca Registrada: INNOVACERA
• Origem: Fujian, China
• Capacidade de Produção: 10000 Piece/Pieces Per Month

Descrição de Produto

Polished Aluminum Nitride (ALN) Ceramic Plate / Innovacera

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low

dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic,

high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is

widely used in communication components, high power led, power electronic devices and other

fields.Special spec products can be produced upon requests.

 

PRODUCT PERFORMANCE

1.Uniform microstructure

2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives

3.High electrical resistivity

4.Thermal expansion coefficient close to that of Silicon

5.Resistance to corrosion and erosion

6.Excellent thermal shock resistance

7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation

occurs around 780°C; the surface layer protects the bulk up to 1380°C).

 

 

Regular Dimensions of AlN Substrate/Wafer

Thickness(mm)

Length*Width(mm)

0.385

2″* 2" 50.8*50.8 mm

3″* 3″ 76.2*76.2mm

4″* 4″ 101.6*101.6mm

4.5″* 4.5″ 114.3*114.3mm

0.5

0.635

1.0

Diameter(mm)

1.0

Φ16 Φ19

Φ20 Φ26

Φ30 Φ35

Φ40 Φ45

Φ50 Φ52

Φ60

Φ75

Φ80

PS: Other dimensions which are not listed are available upon your requests.

Material Properties of Aluminum Nitride Substrate/Wafer
Property Content	Property Index
Density(g/cm³)	3.335
Resistance to Thermal Shock	No Cracks
Thermal conductivity(30, W/m.k)	≥170
Linear expansion coefficient (/, 5/min, 20-300)	2.805×10­6
Flexural strength (MPa)	382.7
Volume Resistivity (Ω.cm)	1.4×1014
Dielectric constant(1MHz)	8.56
Chemical Durability (mg/cm²)	0.97
Dielectric strength (KV/mm)	18.45
Surface roughness Ra(μm)	0.3~0.5
Camber (length‰)	≤2‰
Appearance/ Color	Dense/ Dark Gray
Note: The general characteristics of the materials described above were derived from laboratory test performed by Innovacera from time on sample quantities. Actual characteristics of production lots may vary.

 

Application

 

 

 

 

 

- RF / Microwave Components

- Power Modulus

- Power Transformers

- High Power LED Package

 

 

 

 

- Laser Diode Sub-mounts

- LED Chip Sub-mount

- Microelectronic Packages

- Transistors

 

 

 

 

- High Thermal Conductivity Substrates

 

for LED & Power Electronics

 

- Substrates for Power Electronics

 

FAQ:

 

What's the MOQ?

MOQ will be 2 pieces

What's the lead time?

Usually it takes 30 days

How do you process the AlN substrate?

Through laser machine scribing, cutting, and drilling, we can process AlN substrate with high accuracy and absolute consistency upon custimers' request.

More questions, please feel free to contact us.

sales(at); may(at)

 

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